Quantum dot arrays in silicon and germanium
نویسندگان
چکیده
منابع مشابه
Quantum confinement in silicon–germanium electron waveguides
Abstract We have simulated the electronic properties of silicon–germanium electron waveguides defined by selective etching on a SiGe heterostructure. In particular, we have investigated the dependence of quantum confinement and of one-dimensional subband separation on the waveguide width. Indeed, a larger subband separation means a larger dephasing length and larger electron mobility in the wav...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2020
ISSN: 0003-6951,1077-3118
DOI: 10.1063/5.0002013